Dynamic Behaviors and Training Effects in TiN/Ti/HfO_x/TiN Memristors with Controllable Quantized Conductance States

Min-Hsuan Peng¹, Ching-Yang Pan¹, Hao-Xuan Zheng², Ting-Chang Chang², Pei-hsun Jiang^1*

¹Department of Physics, National Taiwan Normal University, Taipei, Taiwan
²Department of Physics, National Sun YatSen University, Kaohsiung, Taiwan

* Presenter:Pei-hsun Jiang, email:pjiang@ntnu.edu.tw

Quantum-level manipulation of the atomic configurations in TiN/Ti/HfO_x/TiN memristors is realized with great precision through a pulse-mode reset procedure, assisted with analytical characterization of the set condition, which involves critical monitoring of the measured bias voltage. Detailed analyses of the electrical characteristics reveal the dynamic behaviors of the conductive filament in the HfO_x layer. An intriguing training effect that leads to faster switching of the quantized conductance states is also observed during the operation. Our study provides a closer inspection on the dynamics of the atomic-level structure of the memristors, which helps to develop essential knowledge about the design and fabrication of the future memristor-based quantum and neuromorphic computing devices.

Keywords: HfO₂, resistive random-access memory (RRAM), resistive switching, conductance quantization, training effect