Lattice defects in graphene: Electronic excitation and absorption spectra

Thi-Nga Do^1*, Po-Hsin Shih², Godfrey Gumbs², Danhong Huang³

¹Department of Physics, National Cheng Kung University, Tainan, Taiwan
²Department of Physics and Astronomy, City University of New York, New York, New York, USA
³US Air Force Research Laboratory, Kirtland Air Force Base, Albuquerque, New Mexico, USA

* Presenter:Thi-Nga Do, email:sofia90vn@gmail.com

The novel electronic and optical properties of graphene with defects have been systematically investigated. Our calculations are carried out within the generalized tight-binding model based on a Hamiltonian which considers hopping integrals, doping effect, quantum confinement, edge defect, as well as an external magnetic field. The interplay among these factor gives rise to exotic characteristics of the energy bands, plasmon modes, and absorption spectra. This thorough study demonstrates the essential role played by the crystal structure and an external field in the essential physical properties of materials. Our theoretical predictions should be of great value not only in helping one to better understand 2D materials but also for possible applications in the fields of materials science.

Keywords: graphene with defects, electronic excitation, absorption spectra, tight-binding model, Landau levels