Growth behavior of Bi deposited on Nb-doped SrTiO₃

Jhe-Jhih Lin^1*, Naoya Kawakami¹, Wan-Hsin Chen¹, Chun-Liang Lin¹

¹Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

* Presenter:Jhe-Jhih Lin, email:f871224000309.ep06@nctu.edu.tw

Two-dimensional (2D) topological insulator (TI) as a member of layered topological materials provides an opportunity for us to realize spintronic devices. Although 2D TIs such as silicene and layered Bi are successfully synthesized on metal or semiconductor substrates, the interaction between the 2DTI and substrates breaks their intrinsic properties. Therefore, growing 2DTI on dielectric substrates may give us a chance to study the intrinsic properties of 2DTI. In this study, we demonstrate the in-situ growth of Bi on an Nb-doped SrTiO3 (STO) in an ultra-high vacuum (UHV) chamber. STM observation revealed that Bi islands are uniformly distributed on the surface with two types of shapes. The size and shape of the islands evolve as the deposition proceeds. Our results can open new avenues for studying the intrinsic properties of 2DTI.

Keywords: Bi, Topological insulators, Island growth