Lateral epitaxy of BiFeO3 thin films

Chia-Chun Wei^1*, Sheng-Zhu Ho¹, Ping-Chun Wu¹, Jan-Chi Yang¹

¹物理學系, 國立成功大學, 台南, Taiwan

* Presenter:Chia-Chun Wei, email:wei40809@gmail.com

In the research of materials, different structures will lead to different boundary conditions and can be adopted to manipulate the characteristics of different material systems. Such features have made those materials exhibiting outstanding properties and potential candidates in applied physics. In this research, we demonstrate a new heterostructure called lateral epitaxy for complex oxide thin film by the combination of freestanding technique and the concept of twist stacking. With sacrificial layer, freestanding SrTiO3 thin film can be obtained and transferred with certain angle to fabricate twist substrate. In order to understand the influence of this structure, we have demonstrated epitaxial BiFeO3 on twist substrate and measured the functionalities by scanning probe microscopy (SPM), X-ray diffraction (XRD), transmission electron microscopy (TEM)…etc. It is worth to note that the domain structure of BiFeO3 exhibits significant difference in size, which is related to the angle between freestanding thin film and substrate. In the end, we provide a prototype application of twist BiFeO3 for lateral epitaxy.

Keywords: Lateral epitaxy, BiFeO3, Heterostructure