Electrical properties characterization of Ni-DNA devices
Chia-Ching Chang1,2,3*, Wen-Bin Jian2, Yu-Chang Chen2
1Department of Biological Science and Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
2Department of Electrophysics, National Yang Ming Chiao Tung University, hsinchu, Taiwan
3Institute of Physics, Academia Sinica, Taipei, Taiwan
* Presenter:Chia-Ching Chang, email:ccchang01@nycu.edu.tw
DNA chelated with Ni ions (Ni-DNA) has been fabricated in our laboratory. The Ni-DNA nanowire devices demonstrated both memristor and memcapacitor behaviors which may attribute to the redox states transition between Ni2+ and Ni3+. Interestingly, thermal fluctuation may enhance redox state transition rate of Ni ions and ultrahigh Seebeck coefficients (S) can be observed by applying various thermal gradient on this device. Furthermore, 2-D Y-shape Ni-DNA device has been developed and its demonstrated BJT-like analog transistor behavior. Comparing to the electrolytic analog transistor which reported by John Bardeen in 1954, our device is the first solid type analog transistor in the world. Moreover, a Ni-DNA with 3-D structure, DNAzyme, has been fabricated. The structural analysis indicated that it contains non-Ni ions chelating loop. Its effective impedance is not good than linear Ni-DNA by electrochemical impedance spectroscopy. These results indicated that the phosphate backbone of DNA may block charge transfer and the change transfer may pass through the π-π corridor. Namely, each linear Ni-DNA molecule is a conducting nanowire with a potential barrier cladding.

Keywords: Ni-DNA, memristor, memcapacitor, Seebeck coefficient, analog transistor