Growth and characterization of In₂Se₃/PtSe₂ bilayers

Han-Yu Hsu^1*, Bo-Han Chen¹, Guan-Yu Chen¹, Quark Yung-Sung Chen¹, Jhen-Honng Yen¹, Cha-Her Lin¹, Chen-Yu Lien¹, Yu-Chen Chang¹, Li-Wei Tu¹, Paritosh Vilas Wadekar¹

¹Department of Physics and Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung, Taiwan

* Presenter:Han-Yu Hsu, email:k77a2256@g-mail.nsysu.edu.tw

Transition metal selenides shown novel optoelectronic properties based on the transition metal. For example, if X = Pt, then PtSe₂, is a indirect band gap semiconductor (Eg ~ 1.3 to 0.3 eV) with high carrier mobility, while γ-In₂Se₃, is a defective Wurtzite semiconductor with Eg ~ 1.8 eV. The heterostructure of such 2D materials could in principle lead to some novel optoelectronic properties. So, where we study the growth and characterization of γ-In₂Se₃/PtSe₂ bilayers. These samples were grown on single crystalline sapphire substrates using atmospheric pressure chemical vapor deposition (APCVD) processes. By selenization of metallic seed layers of controlled thickness and orientations, we were successful in getting the desired crystalline phases. The samples were characterized using a host of analysis techniques such as X-ray diffraction and reflectivity, Raman spectroscopy, X-ray photoelectron spectroscopy, and optical measurements. The effect of the growth conditions on the crystallinity, morphology, uniformity on the structural and optical properties reported.

Keywords: PtSe₂, optoelectronics, vertical, heterostructures, In₂Se₃