Growth and characterization of In2Se3/PtSe2 bilayers
Han-Yu Hsu1*, Bo-Han Chen1, Guan-Yu Chen1, Quark Yung-Sung Chen1, Jhen-Honng Yen1, Cha-Her Lin1, Chen-Yu Lien1, Yu-Chen Chang1, Li-Wei Tu1, Paritosh Vilas Wadekar1
1Department of Physics and Center of Crystal Research, National Sun Yat-Sen University, Kaohsiung, Taiwan
* Presenter:Han-Yu Hsu,
Transition metal selenides shown novel optoelectronic properties based on the transition metal. For example, if X = Pt, then PtSe2, is a indirect band gap semiconductor (Eg ~ 1.3 to 0.3 eV) with high carrier mobility, while γ-In2Se3, is a defective Wurtzite semiconductor with Eg ~ 1.8 eV. The heterostructure of such 2D materials could in principle lead to some novel optoelectronic properties. So, where we study the growth and characterization of γ-In2Se3/PtSe2 bilayers. These samples were grown on single crystalline sapphire substrates using atmospheric pressure chemical vapor deposition (APCVD) processes. By selenization of metallic seed layers of controlled thickness and orientations, we were successful in getting the desired crystalline phases. The samples were characterized using a host of analysis techniques such as X-ray diffraction and reflectivity, Raman spectroscopy, X-ray photoelectron spectroscopy, and optical measurements. The effect of the growth conditions on the crystallinity, morphology, uniformity on the structural and optical properties reported.

Keywords: PtSe2, optoelectronics, vertical, heterostructures, In2Se3