Mid-Infrared Light Emitting Diodes Based on Van der Waals Heterostructures

Tian Yun Chang^1*, Yueyang Chen², De-In Luo¹, Jia-Xin Li¹, Po-Liang Chen¹, Seokhyeong Lee², Zhuoran Fang², Wei-Qing Li¹, Ya-Yun Zhang¹, Mo Li^2,3, Arka Majumdar^2,3, Chang-Hua Liu¹

¹Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan
²Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington, USA
³Department of Physics, University of Washington, Seattle, Washington, USA

* Presenter:Tian Yun Chang, email:au_zeus3200@hotmail.com

Many important molecules have strong absorption within the mid-infrared spectral region, and this spectral region also contains two atmospheric windows (3-5 µm and 8-14 µm). As a result, developing mid-infrared optoelectronics could be useful for environmental sensing, security and defense as well as biomedical applications. Currently, the widespread use of infrared light sources are mainly based on III–V/II–VI materials. However, these devices require the high cost and sophisticated epitaxial processes of growing materials. Here, we demonstrate a mid-infrared light-emitting diode, which is simply compose of graphene/black phosphorus/graphene van der Waals heterostructures. Importantly, our device could show high quantum efficiency, long-term stability and fast modulation speed. Furthermore, we demonstrate our proposed van der Waals light-emitting diode can be integrated with a silicon waveguide, useful for mid-infrared silicon photonics.

Keywords: mid-infrared, light-emitting diode, black phosphorus, van der Waals heterostructures