Mid-Infrared Light Emitting Diodes Based on Van der Waals Heterostructures
Tian Yun Chang1*, Yueyang Chen2, De-In Luo1, Jia-Xin Li1, Po-Liang Chen1, Seokhyeong Lee2, Zhuoran Fang2, Wei-Qing Li1, Ya-Yun Zhang1, Mo Li2,3, Arka Majumdar2,3, Chang-Hua Liu1
1Institute of Photonics Technologies, National Tsing Hua University, Hsinchu, Taiwan
2Department of Electrical and Computer Engineering, University of Washington, Seattle, Washington, USA
3Department of Physics, University of Washington, Seattle, Washington, USA
* Presenter:Tian Yun Chang, email:au_zeus3200@hotmail.com
Many important molecules have strong absorption within the mid-infrared spectral region, and this spectral region also contains two atmospheric windows (3-5 µm and 8-14 µm). As a result, developing mid-infrared optoelectronics could be useful for environmental sensing, security and defense as well as biomedical applications. Currently, the widespread use of infrared light sources are mainly based on III–V/II–VI materials. However, these devices require the high cost and sophisticated epitaxial processes of growing materials. Here, we demonstrate a mid-infrared light-emitting diode, which is simply compose of graphene/black phosphorus/graphene van der Waals heterostructures. Importantly, our device could show high quantum efficiency, long-term stability and fast modulation speed. Furthermore, we demonstrate our proposed van der Waals light-emitting diode can be integrated with a silicon waveguide, useful for mid-infrared silicon photonics.

Keywords: mid-infrared, light-emitting diode, black phosphorus, van der Waals heterostructures