Engineering quantum emitters in hexagonal boron nitride

Shih-Chu Lin^1*, Yu-Chen Chen², Zi-Xiang Jian¹, Wei-Zhi Qiu¹, Chih-Wei Luo¹, Wen-Hao Chang¹

¹Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan
²Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan

* Presenter:Shih-Chu Lin, email:linsc81893@gmail.com

Single photon emitters (SPEs) have been widely reported in solid state system which play an important role in quantum technologies . In recent years, single photon emission from two-dimensional materials have been thoroughly investigated, in semiconducting transition metal dichalcogenides (TMDs) and insulating hexagonal boron nitride (hBN) . We focus on hBN which display outstanding optical properties at room temperature and offer straight-forward integration into on-chip architectures.
In this work, we demonstrate a method to synthesize relatively low fluorescence background hBN on a Cu (111) thin film across a 2-inch c-plane sapphire wafer. The origin of fluorescence background is defect in hBN. However, the intensity of background fluorescence in our CVD grown hBN samples are just 2~3 fold higher than exfoliated hBN which have been well studied due to low defect density and low fluorescence background. Furthermore, we check the quality of samples by Raman spectroscopy which E2g mode at 1371 cm-1. Although the background counts rate is slightly higher than the exfoliated hBN flakes, CVD method can synthesize large area hBN film is an advantage. Thus, we demonstrate a specific technique to generate single photon emitters in both CVD grown hBN and exfoliated hBN flakes for comparison.

Keywords: Two dimensional material, hBN, Single photon