Dielectric constant measurement based on dark-mode scanning capacitance microscopy

Wei-Chih Hsiao^1*, Hsing-Tzu Tsai¹, Mao-Nan Chang^1,2

¹Institute of Nanoscience, National Chung Hsing University, Taichung, Taiwan
²Department of Physics, National Chung Hsing University, Taichung, Taiwan

* Presenter:Wei-Chih Hsiao, email:cyn92014@gmail.com

Dark-mode scanning capacitance microscopy (SCM)is a nano-metrology technique, which based on atomic force microscopy. It be used to observe two-dimensional carrier concentration distributions, effective channel lengths and p-n junction of semiconductor. Moreover, a study shows that the dielectric constant can be measured on signal intensity equation of SCM. Nowaday, common method used for measure dielectric constant : Free space method, Transmission line method, parallel plate condenser, etc. In this work, it use two quartz piece with different equivalent physical thickness (EPT) and the signal intensity equation of SCM as reference. It can predict the dielectric constant of Borosilicate glass and ZrO2. For the same reason, it also can use two Borosilicate glass with different (EPT) as reference to precisely predict the dielectric constant of quartz piece. The relative standard deviation (RSD) is below 2.5%.The deviation value of quartz piece dielectric constant are below positive and negative 0.05. Experimental results indicated that this method evaluates the dielectric constant of a dielectric material. Moreover. This method is not only applicable to single crystal but also has a high precision in the measurement of amorphous.

Keywords: Dielectric constant, Dark-mode scanning capacitance microscopy, Signal intensity equation