Laser-induced desorption for patterning photoluminance in C60/MoS2 heterostructure
Chuan-Che Hsu1*, Kang-Yao Ma2, Che-Ming Liu2, Chien-Chen Hsu2, Yann-Wen Lan2, Wen-Chin Lin2
1Scientific Research Division, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
2Department of Physics, National Taiwan Normal University, Taipei, Taiwan
* Presenter:Chuan-Che Hsu,
In this study, C60 was deposited on a few-layer MoS2 flake by electron beam evaporation in ultra-high vacuum. We studied morphology, Raman spectra, and photoluminescence (PL) spectra of these systems. MoS2 flakes were grown on SiO2/Si(100) substrates by using chemical vapor deposition. In morphology, the surface roughness of 5-nm C60/MoS2 is ±1 nm; as C60 increases to 9-20 nm, the roughness is saturated at ±2 nm without further improvement. When C60 was deposited on MoS2, no change was observed in the Raman spectrum, indicating that the van der Waals contact between C60 and MoS2 was very weak and would not cause significant changes in the microstructure. As the thickness of C60 increases, the PL peak shifts from 1.83 eV dominated by MoS2 to 1.69 eV dominated by C60. Furthermore, we observed that the local desorption induced by the CW laser was confirmed on the C60/MoS2 heterostructure. The laser power of around 10 mW/µm2 is enough for the desorption of 20 nm C60 from a MoS2 flake and can be used to create designed patterns with a resolution around 500 nm. In addition to the morphological structure, CW laser-induced C60 desorption to achieve patterned PL on C60/MoS2. This method can be applied to the manufacturing of functional nanodevices combining 0-dimensional and two-dimensional materials in the future.

Keywords: MoS2, C60/MoS2, C60 desorption, Nano pattern