Magnetotransport in InSe/epitaxial graphene van der waals hetrostructures
Yun-Wu Lin1*, Chih-Yuan Wang2, Chiashain Chuang3, Cheng-Hsueh Yang2, Dinesh K. Patel1,4, Sheng-Zong Chen1, Ching-Chen Yeh1, Wei-Chen Chen1, Chia-Chun Lin5, Yi-Hsun Chen5, Wei-Hua Wang5, Raman Sankar6,7, Fang-Cheng Chou7, Randolph E. Elmquist4, Chi-Te Liang1,2
1Department of Physics, National Taiwan University, Taipei 106, Taiwan
2Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
3Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
4National Institute of Standard and Technology, Gaithersburg, MD 20899, USA
5Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
6Institute of Physics, Academia Sinica, Taipei 115, Taiwan
7Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan
* Presenter:Yun-Wu Lin,
Magnetotransport properties are systematically studied in a InSe / monolayer graphene van der waals hetrostructures system. It is possible to efficiently change the carrier density, mobility, effective mass, and electron-electron interactions in InSe/graphene hetrostructures compared to those of its bare graphene counterpart. We demonstrate that the logarithmic temperature dependence of the Hall slope can be used to measure electron-electron interaction effects enhanced by weak disorder at different temperatures in bare graphene and hybrid InSe/graphene systems, even when the traditional resistivity approach is not valid in the high-temperature regime. However, as demonstrated by the magnetic field location of the longitudinal resistivity minimum at different temperatures, the change in Hall resistivity is not caused by an increase in carrier density. Our research indicates that capping a van der Waals material on graphene is an efficient way to change the electronic properties of monolayer graphene on SiC, considering the existing challenges in gating graphene on SiC with a suitable dielectric substrate.

Keywords: Magnetotransport, Quantum Hall effect (QHE), InSe/Epitaxial Graphene heterostructure, Shubnikov–de Haas effect (SdH)