Magnetotransport in InSe/epitaxial graphene van der waals hetrostructures

Yun-Wu Lin^1*, Chih-Yuan Wang², Chiashain Chuang³, Cheng-Hsueh Yang², Dinesh K. Patel^1,4, Sheng-Zong Chen¹, Ching-Chen Yeh¹, Wei-Chen Chen¹, Chia-Chun Lin⁵, Yi-Hsun Chen⁵, Wei-Hua Wang⁵, Raman Sankar^6,7, Fang-Cheng Chou⁷, Randolph E. Elmquist⁴, Chi-Te Liang^1,2

¹Department of Physics, National Taiwan University, Taipei 106, Taiwan
²Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan
³Department of Electronic Engineering, Chung Yuan Christian University, Taoyuan 320, Taiwan
⁴National Institute of Standard and Technology, Gaithersburg, MD 20899, USA
⁵Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 106, Taiwan
⁶Institute of Physics, Academia Sinica, Taipei 115, Taiwan
⁷Center for Condensed Matter Sciences, National Taiwan University, Taipei 106, Taiwan

* Presenter:Yun-Wu Lin, email:adam13579246@gmail.com

Magnetotransport properties are systematically studied in a InSe / monolayer graphene van der waals hetrostructures system. It is possible to efficiently change the carrier density, mobility, effective mass, and electron-electron interactions in InSe/graphene hetrostructures compared to those of its bare graphene counterpart. We demonstrate that the logarithmic temperature dependence of the Hall slope can be used to measure electron-electron interaction effects enhanced by weak disorder at different temperatures in bare graphene and hybrid InSe/graphene systems, even when the traditional resistivity approach is not valid in the high-temperature regime. However, as demonstrated by the magnetic field location of the longitudinal resistivity minimum at different temperatures, the change in Hall resistivity is not caused by an increase in carrier density. Our research indicates that capping a van der Waals material on graphene is an efficient way to change the electronic properties of monolayer graphene on SiC, considering the existing challenges in gating graphene on SiC with a suitable dielectric substrate.

Keywords: Magnetotransport, Quantum Hall effect (QHE), InSe/Epitaxial Graphene heterostructure, Shubnikov–de Haas effect (SdH)