Colossal crystalline anisotropic magnetoresistance in Pr0.5Sr0.5MnO3 thin film
You-Sheng Chen1*, Jauyn Grace Lin1,2
1Center for Condensed Matter Sciences, National Taiwan University, Taipei, Taiwan
2Center for Atomic Initiatives for New Materials, National Taiwan University, Taipei, Taiwan
* Presenter:You-Sheng Chen, email:youshengchen@ntu.edu.tw
A remarkably large crystalline anisotropic magnetoresistance (CAMR) is observed in a high-quality epitaxial grown A-type antiferromagnetic Pr0.5Sr0.5MnO3 (PSMO) thin film, which is 1600% at 20 K under the magnetic field of 50 kOe, close to the value obtained in 2-dimensional electron systems. Moreover, the magnitude retains near 200% at 100 K, significantly larger than other CAMR systems.[1] This colossal CAMR undergoes an anisotropic field-induced switching process between low and high resistivity states. Both in-plane and out-of-plane angular dependent CAMR are studied in this work. The angular dependency of CAMR is mirror symmetric, distinct from the rotational symmetry for impurity scattering mechanism. The symmetry of angular dependent CAMR shows an orbital reconstruction at high field, suggesting the origin is related to the nature of giant magnetostriction in PSMO which drives the crystalline symmetry breaking. Furthermore, the in-plane CAMR reveals a sign switching near the phase transition temperature (TP ~160K), revealing the strong relationship between CAMR and A-type antiferromagnetism. In conclusion, the CAMR is attributed to the anisotropic giant magnetostriction behavior according to the interfacial constrain, which partially dissolve the A-type AFM insulator into a 3-dimensional ferromagnetic metal. Our results explored the potential application of A-type antiferromagnetic thin film for the CAMR based devices.
[1] H. J. H. Ma, J. Zhou, M. Yang, Y. Liu, S. W. Zeng, W. X. Zhou, L. C. Zhang, T. Venkatesan, Y. P. Feng and Ariando, Physical Review B 95, 155314 (2017).
Keywords: magnetoresistance, magnetic thin film, spin-orbit interaction, Manganite