Characterizing graphene grown with acetylene in capacitively-coupled plasma vapor deposition system

TingWei Hu^1*, WeiYen Woon¹

¹物理學系, 中央大學, 桃園, Taiwan

* Presenter:TingWei Hu, email:108202515@cc.ncu.edu.tw

The methane plasma-enhanced chemical vapor deposition(PECVD) system has been studied for its higher growth efficiency and less thermal budget compared to the thermal chemical vapor deposition(T-CVD) system. However, methane's high pyrolysis energy requires high energy during the growth process. As an improvement, we chose acetylene, which has lower pyrolysis energy, as the precursor and used a capacitively coupled radio frequency(RF) PECVD system to investigate the growth mechanism. The process parameters, including temperature, gas flow rate, RF power, and growth time are varied to study their effect on the properties and quality of the grown graphene. The structural property of acetylene-grown graphene is compared with the methane ones (previously grown) with the optical microscope, Raman spectroscopy, and scanning electron microscope (SEM), while the electrical properties are compared by Hall measurement.

Keywords: graphene, plasma-enhanced chemical vapor deposition(PECVD), acetylene